, o ne. 20 stern ave. springfield, new jersey 07081 u.s.a. telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 BUS48 BUS48a switchmode iia series npn silicon power transistors the bus 48 and bus 48a transistors are designed (or high- voltage, high-speed, power switching in inductive circuits where fall time is critical. they are particularly suited (or line-operated switch- mode applications such as: ? switching regulators ? inverters ? solenoid and relay drivers ? motor controls ? deflection circuits fast turn-o(( times 60 ns inductive fall time-2bc (typ) 120 ns inductive crossover time -26c ityp) operating temperature range -65 to +20oc 100c performance specified for: reverse-biased so a with inductive loads switching times with inductive loads saturation voltages leakage currents (125"c) maximum ratings rating collbctor-emllter voltage collector-emitter voltage emitter base voltage collector current ? continuous - pnkf.1) ? overload gese current - continuous - peokll) total power dissipation - tc - 25c - tc ? 100c derate above 25c operating and storage junction temperature flange symbol vceo(susl vcev veb .'= icm iol ib 'bm pd tj.t5,9 bus 48 bus 48a 400 460 bsd 10oo 7 ib 8 5 20 175 too 1.0 -6510 +2oo unit vdc vdc vdc adc adc watts wvc c thermal characteristics characteristic thermal resistance. junction to case maximum lead temperature (or soldering purposes: 1/8" from case for 5 seconds symbol rfljc tl max 1.0 275 unit ?c/w c id pulse test: pulse width = 5 ms. duty cycle 10%. 15 amperes npn silicon power transistors 400 ind 450 volts (bvceo) bsd - 1000 volts (bvces) 175 watts designer's data for "worst case" conditions the designers4 data sheet permits the design of most circuits entirely from the information presented, limit data - representing device characteristics boundaries - are given to facilitate "worst case" design. mhl 1*11 i ourm e*n coiunoi i ?tiii??~bmv@l ro-3 nj semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished by nj semi-conductors is believed to be both accurate and reliable at the time of going to press. however, nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use. nj semi-conductors encourages customers to verify that datasheets are current before placing orders. quality semi-conductors
BUS48, BUS48a electrical characteristics (tc - 25c unless otherwise noted) characteristic symbol min tvp max 1 unit off characteristics (1) collector-emitter sustaining voltege (table 11 |ic = 200ma. !b=0)l=2smh BUS48a collector cutoff current ( vcev " "?ed v?"u?. vbe(o(fl = ' -6 vdcl (vcev = rated velue, vfleloff) = ' -6 vdc, tc = 125c) collector cutoff currant _ ^eo. (vce=rated vcev. rbe = 10u) tc = 126c emitter cutoff current (veb=5vdc. lc = 0) emitter-base breakdown voltage he=60ma-lc=0> vceobui) 'cev icer BUS48a collector-eminer saturation voltage !!c = 10adc,lb=2adc) (lc = 15adc.lb=3adc) BUS48 llc = 10adc, (b=2adc,tc = 100c) (lc= 8adc, ib -1.6 ariel (lc = 12 adc. ib=2.4 adcl BUS48a dc= 8adc. lb=1.6adc.tc = 100ci bate-emitter saturation voltage (lc = 10adc.le = 2a<'e) . bus4a (lc = 10adc,lb=2adc.tc=100cci ww (ic= sadc, ld=1.6adc) susffia iic? sadc, lb = l.6adc.tc = 100'>ci avaoaf, hfe vcei?t) vbeiiit) 8 - - - ; - - 1.e 5.0 2.0 1.6 fi.o 2.0 1.6 1.6 1.6 1.6 vdc vdc dynamic characteristics output capacitance |vcb = 10 vdc, ie =0, ftml = 100 khzl cob - - 350 pf switching characteristics rettnlve load (table ii delay time r!? time storage time fell time (vcc =260 vdc, ic = 10 a. duty cycle < 2% . vgelofl) =6 v) ._ ....vi.. ? 'r ti tf _ - _ - d.i 0.4 1.3 0.2 0.2 0.1 2.0 0.4 pj inductive load, clamped (table 1) storage tlrne fall time storage time croisover time fall time llc(pk)=10a. vge(0if)-6 v, vce(c1)=2bov) itc = 25c) |tc = 100ci t? |
